FDC6401N datasheet, mosfet equivalent, Fairchild Semiconductor

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FDC6401N Features and benefits

* 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
* Low gate charge (3.3 nC)
* High performance trench technology for extremely low R.

FDC6401N Application

* DC/DC converter
* Battery Protection
* Power Management D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 .

FDC6401N Description

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switch.

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