FDC642P Datasheet | Fairchild Semiconductor

July 1999 P-Channel 2.5V Specified Power Trench TM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Features • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2n C typical). High performance trench technology for extremely low RDS(ON). Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management Super SOT -6 3...