• • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench te.

where the larger packages are impractical. Features • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have .

FDC6420C

FDC642P-F085

FDC642P-F085P

FDC642P_F085

FDC6401N

FDC640P

FDC6432SH

FDC645N

FDC6000NZ

FDC6020C

FDC602P

FDC6036P

FDC604P