FDC645N mosfet equivalent, n-channel mosfet.
* 5.5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge.
* DC/DC converter
Features
* 5.5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V
* H.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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