FDG6302P fet equivalent, dual p-channel/ digital fet.
-25 V, -0.14 A continuous, -0.4 A peak. RDS(ON) = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 .
as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
-25 V, -0.14 A continuous, -0.4 A p.
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