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FDG6303N Datasheet Dual N-channel Digital Fet

Manufacturer: onsemi

Overview: Digital FET, Dual N-Channel FDG6303N General.

General Description

These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Key Features

  • 25 V, 0.50 A Continuous, 1.5 A Peak  RDS(ON) = 0.45 W @ VGS = 4.5 V  RDS(ON) = 0.60 W @ VGS = 2.7 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
  • Gate.
  • Source Zener for ESD Ruggedness (>6 kV Human Body Model).
  • Compact Industry Standard SC70.
  • 6 Surface Mount Package.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDG6303N Dual N-Channel Digital FET Fairchild Semiconductor

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FDG6303N Distributor