* 25 V, 0.50 A Continuous, 1.5 A Peak  RDS(ON) = 0.45 W @ VGS = 4.5 V  RDS(ON) = 0.60 W @ VGS = 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct O.

as a replacement for bipolar digital transistors and small signal MOSFETs. Features
* 25 V, 0.50 A Continuous, 1.5 A.

These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device.

FDG6301N

FDG6301N-F085

FDG6302P

FDG6304P

FDG6306P

FDG6308P

FDG6313N

FDG6316P

FDG6317NZ

FDG6318P

FDG6318PZ

FDG6320C

FDG6321C