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Digital FET, Dual N-Channel FDG6303N
General Description These dual N−Channel logic level enhancement mode field effect
transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
25 V, 0.50 A Continuous, 1.5 A Peak
RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.60 W @ VGS = 2.7 V
Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits (VGS(th) < 1.
FDG6303N Datasheet
