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FDG6303N Datasheet - ON Semiconductor

Dual N-Channel Digital FET

FDG6303N Features

* 25 V, 0.50 A Continuous, 1.5 A Peak  RDS(ON) = 0.45 W @ VGS = 4.5 V  RDS(ON) = 0.60 W @ VGS = 2.7 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)

* Gate

* Source Zener for ESD Ruggedness (>6 kV Human Body Model)

* Compa

FDG6303N General Description

These dual N *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on *state resistance. This device has been designed especially for .

FDG6303N Datasheet (231.96 KB)

Preview of FDG6303N PDF

Datasheet Details

Part number:

FDG6303N

Manufacturer:

ON Semiconductor ↗

File Size:

231.96 KB

Description:

Dual n-channel digital fet.

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FDG6303N Dual N-Channel Digital FET ON Semiconductor

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