FDG6304P fet equivalent, dual p-channel/ digital fet.
-25 V, -0.41 A continuous, -1.5 A peak. RDS(ON) = 1.1 Ω @ VGS= -4.5 V, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in .
as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
-25 V, -0.41 A continuous, -1.5 A p.
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This dev.
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