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FDG6316P P-Channel MOSFET

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Description

DATA SHEET www.onsemi.com MOSFET * Specified, P-Channel, POWERTRENCH) 1.8 V FDG6316P General .
This P. Channel 1.

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Features

* 0.7 A,
* 12 V
* RDS(ON) = 270 mW @ VGS =
* 4.5 V
* RDS(ON) = 360 mW @ VGS =
* 2.5 V
* RDS(ON) = 650 mW @ VGS =
* 1.8 V
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(ON)
* Com

FDG6316P Distributors

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