FDG6316P

P-Channel MOSFET

ON Semiconductor

* 0.7 A,

* 12 V

* RDS(ON) = 270 mW @ VGS =

* 4.5 V

* RDS(ON) = 360 mW @ VGS =

* 2.5 V

* RDS(ON) = 650 mW @ VGS =

* 1.8 V

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)

* Com

FDG6316P

290.38 KB

P-channel mosfet.

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FDG6316P P-Channel MOSFET ON Semiconductor

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