FDMA1024NZ Datasheet | Fairchild Semiconductor

FDMA1024NZ Dual N-Channel Power Trench® MOSFET May 2009 .. Dual N-Channel PowerTrench® MOSFET 20 V, 5.0 A, 54 mΩ Features - Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A - Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A - Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A - Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It Features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance...