FDMA1024NZ Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A - Max r DS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A - Max r DS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A - Max r DS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The Micro FET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. - HBM ESD protection level = 1.6 k V (Note 3) - Low profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm - Ro HS pliant - Free from halogenated pounds and antimony oxides Applications - Baseband Switch - Loadswitch - DC-DC Conversion PIN 1 S1 G1 D2 S1 1 2 3 6 5 4 D1 G2 S2 D1 D2 G1 D2 D1 Micro FET 2x2 G2 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 20 ±8 5.0 6.0 1.4 0.7 - 55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) °C/W Package Marking and Ordering Information Device Marking 024 Device FDMA1024NZ Package Micro FET 2X2 Reel Size 7” Tape Width 8 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation FDMA1024NZ Rev.B3 .fairchildsemi. FDMA1024NZ Dual N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test...