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FDMA1024NZ Dual N-Channel Power Trench® MOSFET
May 2009
FDMA1024NZ
www.datasheet4u.com
Dual N-Channel PowerTrench® MOSFET
20 V, 5.0 A, 54 mΩ Features
Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A
General Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
HBM ESD protection level = 1.
FDMA1024NZ Datasheet
