FDMA1024NZ
Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.
Key Features
- Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A
- Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A
- Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A
- Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A
