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FDMA1025P - Dual P-Channel MOSFET

General Description

July 2014 Max rDS(on) = 155m: at VGS = 4.5V, ID = 3.1A Max rDS(on) = 220m: at VGS = 2.5V, ID = 2.3A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm RoHS Compliant Free from halogenated compounds

Key Features

  • General.

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FDMA1025P Dual P-Channel PowerTrench® MOSFET FDMA1025P Dual P-Channel PowerTrench® MOSFET –20V, –3.1A, 155m: Features General Description July 2014 „ Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A „ Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A „ Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm „ RoHS Compliant „ Free from halogenated compounds and antimony oxides This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.