FDMA1025P Datasheet (PDF) Download
Fairchild Semiconductor
FDMA1025P

Description

July 2014 „ Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A „ Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A „ Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm „ RoHS pliant „ Free from halogenated pounds and antimony oxides This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications.

Applications

  • Pulsed Power Dissipation for Single Operation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a)