FDMB506P Key Features
- 6.8 A, -20V. RDS(ON) = 30 mΩ @ VGS = -4.5V RDS(ON) = 38 mΩ @ VGS = -2.5V RDS(ON) = 70 mΩ @ VGS = -1.8V
- Low profile
- 0.8 mm maximum
- Fast switching
- Part: FDMB506P
- Manufacturer: Fairchild (official site)
- Size: 243.00 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDMB2307NZ | Dual Common Drain N-Channel MOSFET |
| FDMB2308PZ | MOSFET |
| FDMB3800N | Dual N-Channel PowerTrench MOSFET |
| FDMB3900AN | Dual N-Channel MOSFET |
| FDMB668P | P-Channel 1.8V Logic Level PowerTrench MOSFET |
FDMB506P Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.