FDMB506P datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

*
  –6.8 A,
  –20V. RDS(ON) = 30 mΩ @ VGS =
  –4.5V RDS(ON) = 38 mΩ @ VGS =
  –2.5V RDS(ON) = 70 mΩ @ VGS =

Application

Features
*
  –6.8 A,
  –20V. RDS(ON) = 30 mΩ @ VGS =
  –4.5V RDS(ON) = 3.

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ar.

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