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FDMB506P - P-Channel 1.8V Logic Level PowerTrench MOSFET

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 6.8 A,.
  • 20V. RDS(ON) = 30 mΩ @ VGS =.
  • 4.5V RDS(ON) = 38 mΩ @ VGS =.
  • 2.5V RDS(ON) = 70 mΩ @ VGS =.
  • 1.8V.
  • Low profile.
  • 0.8 mm maximum.
  • Fast switching.

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FDMB506P December 2005 FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features • –6.8 A, –20V. RDS(ON) = 30 mΩ @ VGS = –4.5V RDS(ON) = 38 mΩ @ VGS = –2.5V RDS(ON) = 70 mΩ @ VGS = –1.8V • Low profile – 0.8 mm maximum • Fast switching Applications • Load switch • DC/DC Conversion • RoHS compliant PIN 1 GATE S D www.DataSheet4U.com 5 6 7 8 4 3 2 1 G D D D SOURCE D D MicroFET 3x1.
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