FDMC86160ET100 Description
Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been...
FDMC86160ET100 Key Features
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
- Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant