Datasheet Details
| Part number | FDMC86160ET100 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 210.88 KB |
| Description | MOSFET |
| Datasheet | FDMC86160ET100-FairchildSemiconductor.pdf |
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Overview: FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ January.
| Part number | FDMC86160ET100 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 210.88 KB |
| Description | MOSFET |
| Datasheet | FDMC86160ET100-FairchildSemiconductor.pdf |
|
|
|
Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance.
This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86160ET100 | N-Channel MOSFET | ON Semiconductor |
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