FDMC86160 Key Features
- Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
- Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
- Part: FDMC86160
- Description: N-Channel Power Trench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 305.93 KB
Other FDMC86160 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDMC86160 | N-Channel MOSFET |
|
onsemi |
FDMC86160ET100 | N-Channel MOSFET |