Datasheet Details
| Part number | FDMC86160 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 305.93 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC86160 Download (PDF) |
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Overview: FDMC86160 N-Channel Power Trench® MOSFET January 2013 FDMC86160 N-Channel Power Trench® MOSFET 100 V, 43 A, 14.
| Part number | FDMC86160 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 305.93 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC86160 Download (PDF) |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
Applications Bridge Topologies Synchronous Rectifier Pin 1 Pin 1 S S S S G S S D D D G D D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 43 9 50 181 54 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.3 53 °C/W Package Marking and Ordering Information Device Marking FDMC86160 Device FDMC86160 Package Power33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation FDMC86160 Rev.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86160 | N-Channel MOSFET | ON Semiconductor |
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FDMC86160ET100 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDMC86160ET100 | MOSFET |
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