Datasheet Summary
FDMC86324 N-Channel Power Trench® MOSFET
May 2010
N-Channel Power Trench® MOSFET
80 V, 20 A, 23 mΩ
Features
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
- DC
- DC Conversion
Top
Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
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