FDMS3660S Datasheet Asymmetric Dual N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Datasheet Details

Part number	FDMS3660S
Manufacturer	Fairchild (now onsemi)
File Size	577.12 KB
Description	Asymmetric Dual N-Channel MOSFET
Download	FDMS3660S Download (PDF)

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.

FDMS3660S PowerTrench® Power Stage FDMS3660S PowerTrench® Power Stage Asymmetric Dual N-Channel.

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant February 2015.

Brand Logo	Part Number	Description	Manufacturer
	FDMS3660S	Asymmetric Dual N-Channel MOSFET	ON Semiconductor