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FDMS8690 - N-Channel MOSFET

General Description

This device has been designed specifically to improve the efficiency of DC-DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Key Features

  • Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 19.8A Max rDS(on) = 12.5mΩ at VGS = 4.5V, ID = 11.5A High performance trench technology for extremely low rDS(on) and gate charge Minimal Qgd (2.9 nC typical) RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FDMS8690 N-Channel PowerTrench® MOSFET March 2006 FDMS8690 N-Channel PowerTrench® MOSFET 30V, 19.8A, 9mΩ General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device. Features „ „ „ „ „ Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 19.8A Max rDS(on) = 12.5mΩ at VGS = 4.5V, ID = 11.