* 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V
* Low gate charge (4.5 nC typical)
* Fast switching sp.

Features
* 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V <.

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features
* 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 .

FDN302P

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FDN335N

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FDN337N

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FDN340P

FDN342P