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FDN339AN - N-Channel MOSFET

Description

This N Channel 2.5 V specified MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 3 A, 20 V.
  • RDS(on) = 0.035 W @ VGS = 4.5 V.
  • RDS(on) = 0.050 W @ VGS = 2.5 V.
  • Low Gate Charge (7 nC Typical).
  • High Performance Trench technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability Typical.

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Datasheet preview – FDN339AN

Datasheet Details

Part number FDN339AN
Manufacturer ON Semiconductor
File Size 264.90 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN339AN Datasheet
Additional preview pages of the FDN339AN datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel POWERTRENCH) 2.5 V Specified FDN339AN Description This N−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features • 3 A, 20 V ♦ RDS(on) = 0.035 W @ VGS = 4.5 V ♦ RDS(on) = 0.050 W @ VGS = 2.
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