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FDN339AN Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

This N−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

Overview

MOSFET – N-Channel POWERTRENCH) 2.5 V Specified FDN339AN.

Key Features

  • 3 A, 20 V.
  • RDS(on) = 0.035 W @ VGS = 4.5 V.
  • RDS(on) = 0.050 W @ VGS = 2.5 V.
  • Low Gate Charge (7 nC Typical).
  • High Performance Trench technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability Typical.

📁 Similar Datasheet

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Fairchild Semiconductor Logo FDN339AN N-Channel MOSFET Fairchild Semiconductor

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