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FDN339AN N-Channel MOSFET

FDN339AN Description

MOSFET * N-Channel POWERTRENCH) 2.5 V Specified FDN339AN .
This N. Channel 2.

FDN339AN Features

* 3 A, 20 V
* RDS(on) = 0.035 W @ VGS = 4.5 V
* RDS(on) = 0.050 W @ VGS = 2.5 V
* Low Gate Charge (7 nC Typical)
* High Performance Trench technology for Extremely Low RDS(ON)

FDN339AN Applications

* DC
* DC Converter
* Load Switch ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current
* Continuous (Note 1a)
* Pulsed 20 V ±8 V A 3 20 PD Po

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N-Channel MOSFET ON Semiconductor
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