FDN339AN
Key Features
- 3 A, 20 V
- RDS(on) = 0.035 W @ VGS = 4.5 V
- RDS(on) = 0.050 W @ VGS = 2.5 V
- Low Gate Charge (7 nC Typical)
- High Performance Trench technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| FDN339AN | Fairchild Semiconductor | N-Channel MOSFET |
| FDN335N | Fairchild Semiconductor | N-Channel MOSFET |
| FDN336P | Fairchild Semiconductor | single P-Channel MOSFET |
| FDN338P | Fairchild Semiconductor | P-Channel MOSFET |