FDN306P Datasheet, Fairchild Semiconductor

*
  –2.6 A,
  –12 V. RDS(ON) = 40 mΩ @ VGS =
  –4.5 V RDS(ON) = 50 mΩ @ VGS =
  –2.5 V RDS(ON) = 80 mΩ @ VGS =.

Features
*
  –2.6 A,
  –12 V. RDS(ON) = 40 mΩ @ VGS =
  –4.5 V RDS(ON) =.

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features
*
  –2.6 A,
  –12 V. RDS(ON) = 40 mΩ @ VGS =