*
*
* 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for ext.

* DC/DC converter
* Load switch
* D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolu.

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. .

FDN336P

FDN337N

FDN338

FDN338P

FDN339AN

FDN302P

FDN304P

FDN304PZ

FDN306P

FDN308P

FDN327N

FDN340P

FDN342P