FDN335N

The FDN335N is N-Channel MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDN335N
Manufacturer	Fairchild Semiconductor
File Size	210.06 KB
Description	N-Channel MOSFET
Datasheet	FDN335N_FairchildSemiconductor.pdf
Additional preview pages of the FDN335N datasheet.

Product details

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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Published: Mar 30, 2005 |