FDS4410A Datasheet | Fairchild Semiconductor

Features - 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V RDS(ON) = 20 mΩ @ VGS = 4.5 V - Fast switching speed - Low gate charge - High performance trench technology for extremely low RDS(ON) - High power and current handling capability General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. SO-8 Pin 1 54 63 72 81 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain- Source Voltage Gate- Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1b) (Note 1) Ratings 30 ±20 10 50 2.5 1.0 - 55 to +150 50 125 25 Package Marking and Ordering Information Device...