FDS4470 mosfet equivalent, n-channel mosfet.
* 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V
* Low gate charge (45 nC)
* High performance trench technology for extremely
low RDS(ON)
* High power and curr.
* DC/DC converter
Features
* 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V
* Low gate charge (45 nC)
* High.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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