FDS4770 mosfet equivalent, 40v n-channel mosfet.
* 13.2 A, 40 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V
* Low gate charge (30 nC)
* High performance trench technology for extremely low RDS(ON)
* High power and c.
* DC/DC converter
D D D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25oC unless otherwise noted
.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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