FDS6679 mosfet equivalent, 30 volt p-channel powertrench mosfet.
*
–13 A,
–30 V. RDS(ON) = 9 mΩ @ VGS =
–10 V RDS(ON) = 13 mΩ @ VGS =
– 4.5 V
* Extended VGSS range.
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
D D.
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower gate.
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