FDS6688 mosfet equivalent, 30v n-channel powertrench mosfet.
* 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V
* Ultra-low gate charge (40 nC typical)
* High performance trench technology for extre.
* DC/DC converter
D D SO-8
D D
DD D D
5 6
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25oC unless otherwise noted
.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, provi.
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