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FDS6680AS 30V N-Channel MOSFET

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Description

FDS6680AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6680AS tm 30V N-Channel PowerTrench® SyncFET™ General .
Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

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Datasheet Specifications

Part number
FDS6680AS
Manufacturer
Fairchild Semiconductor
File Size
761.88 KB
Datasheet
FDS6680AS_FairchildSemiconductor.pdf
Description
30V N-Channel MOSFET

Features

* The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s m

Applications

* 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (22nC typical)
* High performance trench technology for extremely low RDS(ON) and fast switching
* High power and cur

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