FDS6681Z Datasheet - Fairchild Semiconductor

FDS6681Z MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac.

FDS6681Z Features

* 20 A,

* 30 V. RDS(ON) = 4.6 mΩ @ VGS =

* 10 V RDS(ON) = 6.5 mΩ @ VGS =

* 4.5 V

* Extended VGSS range (

* 25V) for battery applications

* HBM ESD protection level of 8kV typical (note 3)

* High performance trench technology for ext

FDS6681Z Datasheet (217.27 KB)

FDS6681Z Datasheet Preview — Preview of FDS6681Z PDF

Datasheet Details

Part number:

FDS6681Z

Manufacturer:

Fairchild Semiconductor

File Size:

217.27 KB

Description:

Mosfet.

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FDS6681Z MOSFET Fairchild Semiconductor

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