FDS6681Z Datasheet (Fairchild Semiconductor)

FDS6681Z, MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac

FDS6681Z Features

* 20 A,

* 30 V. RDS(ON) = 4.6 mΩ @ VGS =

* 10 V RDS(ON) = 6.5 mΩ @ VGS =

* 4.5 V

* Extended VGSS range (

* 25V) for battery applications

* HBM ESD protection level of 8kV typical (note 3)

* High performance trench technology for ext