FDS6680A Datasheet - Fairchild Semiconductor

FDS6680A N-Channel MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicat.

FDS6680A Features

* 12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4

FDS6680A Datasheet (241.42 KB)