FDS6680S 30V N-Channel Power MOSFET

Fairchild Semiconductor

Description

FDS6680S February 2000 PRELIMINARY FDS6680S 30V N-Channel PowerTrench SyncFET™ General .
The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

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Datasheet Specifications

Part number: FDS6680S
Manufacturer: Fairchild Semiconductor
File Size: 222.29 KB
Datasheet: FDS6680S_FairchildSemiconductor.pdf
Description: 30V N-Channel Power MOSFET

Features

* 11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.5 V
* Includes SyncFET Schottky body diode Low gate charge (17nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling c

Applications

* DC/DC converter
* Motor drives
* D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25 C unless otherwise noted o Parameter Ratin

FDS6680S Distributors

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FDS6680S 30V N-Channel Power MOSFET Fairchild Semiconductor

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