FDS6680S Datasheet (Fairchild Semiconductor)

FDS6680S, 30V N-Channel Power MOSFET

The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDS6680S includes an integrated Schottky diode using Fairchild’s mono

FDS6680S Features

* 11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.5 V

* Includes SyncFET Schottky body diode Low gate charge (17nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling c