FDS6692 Datasheet | Fairchild Semiconductor

September 2003 30V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 12 A, 30 V. RDS(ON) = 12 mΩ @ V GS = 10 V. RDS(ON) = 14.5 mΩ @ V GS = 4.5 V Applications - DC/DC converter - High performance trench technology for extremely low RDS(ON) - Low gate charge (18 nC typical) - High power and current handling capability 5 6 4 3 2 1 SO-8 7...