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FDS8884 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

  • Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A.
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A.
  • Low gate charge.
  • 100% RG Tested.
  • RoHS Compliant M.

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Datasheet preview – FDS8884

Datasheet Details

Part number FDS8884
Manufacturer Fairchild Semiconductor
File Size 332.23 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8884 Datasheet
Additional preview pages of the FDS8884 datasheet.

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Full PDF Text Transcription

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FDS8884 N-Channel PowerTrench® MOSFET February 2006 FDS8884 N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. A REE I DF Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A „ Low gate charge „ 100% RG Tested „ RoHS Compliant M ENTATIO LE N MP LE D D D D www.DataSheet4U.
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