FDS8884
Features
- Max r DS(on) = 23mΩ at VGS = 10V, ID = 8.5A
- Max r DS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
- Low gate charge
- 100% RG Tested
- Ro HS pliant
M ENTATIO LE N MP
..
5 6 7 8
4 3 2 1
SO-8
MOSFET Maximum Ratings
Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed
TA = 25°C unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) (Note 2) 8.5 40 32 2.5 20 -55 to 150 Units V V A A m J W m W/o C o
Single Pulse Avalanche Energy Power dissipation Derate above 25o C Operating and Storage Temperature
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25 o C/W o
C/W
Package Marking and Ordering Information
Device Marking FDS8884 Device FDS8884 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units
©2006 Fairchild Semiconductor Corporation FDS8884 Rev. A
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FDS8884 N-Channel Power...
