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* 65A, 200V, RDS(on) = 0.032Ω @VGS = 10 V Low gate charge ( typical 170 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche test.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQA65N06

FQA62N25C

FQA6N70

FQA6N80

FQA6N90

FQA6N90C

FQA6N90C-F109

FQA6N90C_F109

FQA020ADC-007-M

FQA020ADC-007-S

FQA020ADC-N07-S

FQA10N60C

FQA10N80