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FQA65N06 - 60V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 72A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series TC = 25°C unless otherwise noted ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drai.

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Datasheet Details

Part number FQA65N06
Manufacturer Fairchild Semiconductor
File Size 652.84 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FQA65N06 Datasheet
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FQA65N06 May 2001 QFET FQA65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • 72A, 60V, RDS(on) = 0.
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