FQA6N70 datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 563.21KB)

FQA6N70 Features and benefits

*
*
*
*
*
* 6.4A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche test.

FQA6N70 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

Image gallery