FQA6N80 mosfet equivalent, 800v n-channel mosfet.
*
*
*
*
*
* 6.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche teste.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 677.26KB)