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* 24A, 80V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche t.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB200N04

FQB20N06

FQB20N06L

FQB22P10

FQB22P10TM-F085

FQB22P10TM_F085

FQB25N33

FQB25N33TM-F085

FQB25N33TM_F085

FQB27N25

FQB27N25TM-F085

FQB27N25TM_F085

FQB27P06