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* 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB6N15

FQB6N25

FQB6N40

FQB6N40C

FQB6N45

FQB6N50

FQB6N60

FQB6N70

FQB6N90

FQB60N03L

FQB630

FQB65N06

FQB6P25