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FQB6N90 Datasheet - Fairchild Semiconductor

FQB6N90 900V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th.

FQB6N90 Features

* 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S

FQB6N90_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB6N90

Manufacturer:

Fairchild Semiconductor

File Size:

596.45 KB

Description:

900v n-channel mosfet.

FQB6N90 Distributor

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FQB6N90 FQB6N90 900V N-Channel MOSFET Fairchild Semiconductor