HGTG30N60B3
features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49170.
Features
- 60A, 600V, TC = 25o C
- 600V Switching SOA Capability
- Typical Fall Time-
- - . . 90ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND G30N60B3
COLLECTOR (BACK METAL)
NOTE: When ordering, use the entire part number.
Symbol
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS...
