HGTG30N60B3 Datasheet | Fairchild Semiconductor

Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49170. Features - 60A, 600V,...