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MRF5P20180HR6 - RF Power Field Effect Transistor

Description

1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 µF, 35 V Tantalum Capacitors 220 µF, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Part Number 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer ATC ATC

Features

  • 2-Carrier W-CDMA Spectrum MRF5P20180HR6 6 RF Device Data Freescale Semiconductor f = 1930 MHz Zload f = 1990 MHz f = 1990 MHz Zo = 25 Ω Zsource f = 1930 MHz VDD = 28 V, IDQ = 2 x 800 mA, Pout = 38 W Avg. f MHz 1930 1960 1990 Zsource Ω 6.54 - j16.04 9.70 - j17.92 13.88 - j20.46 Zload Ω 4.06 - j5.56 3.70 - j5.48 3.64 - j5.76 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain,.

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Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 800 mA, Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc @ 3.
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