Datasheet4U Logo Datasheet4U.com

MRF5P21045NR1 - RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Description

220 nF Chip Capacitor 6.8 pF Chip Capacitors 6.8 μF Chip Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 1 pF Chip Capacitors 1.5 pF Chip Capacitor 0.5 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 18125C224KAT4A ATC100B6R8BT500XT C4532X5R1H685MT EMVY630A

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5P21045NR1 2110 - 2170 MHz, 10 W AVG. , 28 V 2 x W - CDMA, DUAL PATH.

📥 Download Datasheet

📁 Similar Datasheet

  • MRF5P21180 - N-Channel Enhancement-Mode Lateral MOSFET (Motorola)
  • MRF5P21240R6 - RF POWER FIELD EFFECT TRANSISTOR (Motorola)
  • MRF5P20180R6 - RF POWER FIELD EFFECT TRANSISTOR (Motorola)
  • MRF5003 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF5007 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF5007R1 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF501 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF5015 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF502 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF5035 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
Other Datasheets by Freescale Semiconductor

Full PDF Text Transcription

Click to expand full text
Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc in 3.
Published: |