Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev.2, 5/2006 RF Power Field Effect Transistors N - Chann.
Short RF Bead 0.
4.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 V Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness on
Applications
* at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg. , Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Chann
