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MRF5S19130HSR3 - RF Power Field Effect Transistors

Download the MRF5S19130HSR3 datasheet PDF. This datasheet also covers the MRF5S19130HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

Short RF Bead 0.8 pF Chip Capacitor 0.6 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor 1.7 pF Chip Capacitor 9.1 pF Chip Capacitors 1 μF, 25 V Tantalum Capacitors 47 μF, 50 V Electrolytic Capacitor 0.1 μF Chip Capacitors 1000 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF, 35 V

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 V Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19130HR3 MRF5S19130HSR3 1930- 1990 MHz, 26 W AVG. , 28 V 2 x N - CDMA LA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S19130HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs Motorola
MRF5S19130SR3 N-Channel Enhancement-Mode Lateral MOSFETs Motorola
MRF5S19100HR3 The RF MOSFET Line RF Power Field Effect Transistors Motorola
MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors Motorola
MRF5S19150R3 RF Power Field Effect Transistors Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19130HR3 RF Power Field Effect Transistors
MRF5S19150HR3 RF Power Field Effect Transistors
MRF5S19150HSR3 RF Power Field Effect Transistors
MRF5S19060MBR1 RF Power Field Effect Transistors
MRF5S19060MR1 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13 dB Drain Efficiency — 25% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.
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