MRF5S19100HR3 Datasheet (Motorola) - The RF MOSFET Line RF Power Field Effect Transistors

MRF5S19100HR3, The RF MOSFET Line RF Power Field Effect Transistors

Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B2R7BP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 44F3358 100B2R2BP 500X 100B0R3BP 500X D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC ATC Kemet Kem

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev.

4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band.

IS - 95 (Pilot, Sync, Paging,

MRF5S19100HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gold Plating Thickness