MRF5S19150HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF5S19150HR3, RF Power Field Effect Transistors

MRF5S19150HR3 MRF5S19150HSR3 RF Device Data Freescale Semiconductor 3 C17 C18 C9 B1 R3 VGG R2 www.datasheet4u.com R1 C15 C8 C7 C6 C16 C21 C22 C24 CUT OUT AREA C5 VDD C14 C19 C20 C23 C4 C1 C2 C10 C3 C11 C12 C32 C33 C26 C27 B2 MRF5S19150 Rev 4 R4 C13 C25 C30 C31 C28 C29 Freescale has begun the

Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev.

2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

www.datasheet4u.com Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1400 mA, Avg., Pout = 32 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Syn

MRF5S19150HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 V Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gold Plating Thickness on