MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs

Motorola

Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5S19130/D MRF5S19130R3 RF Power.
Short RF Bead 0. 4.

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Datasheet Specifications

Part number: MRF5S19130R3
Manufacturer: Motorola
File Size: 440.44 KB
Datasheet: MRF5S19130R3_Motorola.pdf
Description: N-Channel Enhancement-Mode Lateral MOSFETs

Features

* = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information O

Applications

* at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Chan

MRF5S19130R3 Distributors

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MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs Motorola

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