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MRF5S19130R3 - N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S19130R3 Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5S19130/D MRF5S19130R3 RF Power.
Short RF Bead 0. 4.

MRF5S19130R3 Features

* = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information O

MRF5S19130R3 Applications

* at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Chan

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Datasheet Details

Part number
MRF5S19130R3
Manufacturer
Motorola
File Size
440.44 KB
Datasheet
MRF5S19130R3_Motorola.pdf
Description
N-Channel Enhancement-Mode Lateral MOSFETs

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N-Channel Enhancement-Mode Lateral MOSFETs Motorola
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