Datasheet Details
- Part number
- MRF5S19130R3
- Manufacturer
- Motorola
- File Size
- 440.44 KB
- Datasheet
- MRF5S19130R3_Motorola.pdf
- Description
- N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19130R3 Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5S19130/D MRF5S19130R3 RF Power.
Short RF Bead 0.
4.
MRF5S19130R3 Features
* = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MOTOROLA RF DEVICE DATA
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MRF5S19130R3 Applications
* at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Chan
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