MRF5S19130R3 Datasheet - Motorola

MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs

Short RF Bead 0.8 pF Chip Capacitor, B Case 0.6 * 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor, B Case 1.7 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1 µF, 25 V Tantalum Capacitors 47 µF, 50 V Electrolytic Capacitor 0.1 µF Chip Capacitors, B Case 1000 pF Chip Capac.

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1.

MRF5S19130R3 Features

* = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information O

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