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MRF5S19130R3

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S19130R3 Features

* = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information O

MRF5S19130R3 General Description

Short RF Bead 0.8 pF Chip Capacitor, B Case 0.6

* 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor, B Case 1.7 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1 µF, 25 V Tantalum Capacitors 47 µF, 50 V Electrolytic Capacitor 0.1 µF Chip Capacitors, B Case 1000 pF Chip Capac.

MRF5S19130R3 Datasheet (440.44 KB)

Preview of MRF5S19130R3 PDF

Datasheet Details

Part number:

MRF5S19130R3

Manufacturer:

Motorola

File Size:

440.44 KB

Description:

N-channel enhancement-mode lateral mosfets.
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D MRF5S19130R3 RF Power.

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MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs Motorola

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