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MRF5S19100HSR3, MRF5S19100HR3 - The RF MOSFET Line RF Power Field Effect Transistors

MRF5S19100HSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev.4, 5/2006 RF Power Field Effect Transistors N - Chann.
Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B2R7BP 500X 100B4R3JP 500X T494D106(1)035AS T494X22.

MRF5S19100HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness

MRF5S19100HSR3 Applications

* with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg. , Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Ban

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF5S19100HSR3, MRF5S19100HR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF5S19100HSR3, MRF5S19100HR3
Manufacturer
Motorola
File Size
603.98 KB
Datasheet
MRF5S19100HR3_Motorola.pdf
Description
The RF MOSFET Line RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF5S19100HSR3, MRF5S19100HR3.
Please refer to the document for exact specifications by model.

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The MOSFET Line Power Field Effect Transistors Motorola
Motorola MRF5S19100HSR3-like datasheet