MRF5S19130HSR3 Datasheet - Freescale Semiconductor

MRF5S19130HSR3 RF Power Field Effect Transistors

Short RF Bead 0.8 pF Chip Capacitor 0.6 * 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor 1.7 pF Chip Capacitor 9.1 pF Chip Capacitors 1 μF, 25 V Tantalum Capacitors 47 μF, 50 V Electrolytic Capacitor 0.1 μF Chip Capacitors 1000 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF, 35 V.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Pa.

MRF5S19130HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 V Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gold Plating Thickness on

MRF5S19130HSR3 Datasheet (456.61 KB)