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MRF5S19130HSR3

RF Power Field Effect Transistors

MRF5S19130HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 V Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gold Plating Thickness on

MRF5S19130HSR3 General Description

Short RF Bead 0.8 pF Chip Capacitor 0.6

* 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor 1.7 pF Chip Capacitor 9.1 pF Chip Capacitors 1 μF, 25 V Tantalum Capacitors 47 μF, 50 V Electrolytic Capacitor 0.1 μF Chip Capacitors 1000 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF, 35 V.

MRF5S19130HSR3 Datasheet (456.61 KB)

Preview of MRF5S19130HSR3 PDF

Datasheet Details

Part number:

MRF5S19130HSR3

Manufacturer:

Freescale Semiconductor

File Size:

456.61 KB

Description:

Rf power field effect transistors.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Chann.

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TAGS

MRF5S19130HSR3 Power Field Effect Transistors Freescale Semiconductor

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