MRF5S19090LSR3, MRF5S19090LR3 Datasheet - Motorola

MRF5S19090LSR3 N-CHANNEL RF POWER MOSFETs

Value, P/N or DWG 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.7BP 500X 44F3358 D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Newark Newark Newark .

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5S19090LR3 RF Power Field Effect Transistors MRF5S19090LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicar.

MRF5S19090LSR3 Features

* ale.com MRF5S19090LR3 MRF5S19090LSR3 5 ARCHIVE INFORMATION 6

* 60 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 IRL, INPUT RETURN LOSS (dB) Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 Gps η ACPR IM3 VD

MRF5S19090LR3_Motorola.pdf