MRF5S19090HSR3, MRF5S19090HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF5S19090HSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev.2, 5/2006 RF Power Field Effect Transistors N - Chann.
Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.

MRF5S19090HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness

MRF5S19090HSR3 Applications

* with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 18 Watts Avg. , Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel

📥 Download Datasheet

MRF5S19090HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF5S19090HSR3, MRF5S19090HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF5S19090HSR3, MRF5S19090HR3
Manufacturer: Freescale Semiconductor
File Size: 445.84 KB
Datasheet: MRF5S19090HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF5S19090HSR3, MRF5S19090HR3.
Please refer to the document for exact specifications by model.

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