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MRF5S19150SR3 Datasheet - Motorola

MRF5S19150SR3 RF Power Field Effect Transistors

MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 3 ARCHIVE INFORMATION C26 C27 + C32 + C33 Freescale Semiconductor, Inc. C17 C18 C9 B1 R3 VGG R2 R1 C15 C8 C7 C6 C16 C21 C22 C24 CUT OUT AREA C5 VDD C14 C19 C20 C23 C4 C1 C2 C1.
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19150/D MRF5S19150R3 RF Power Field Effect Transistors MRF5S19150SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ .

MRF5S19150SR3 Features

* TICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG., N

* CDMA Gps ACPR VDD = 28 Vdc, IDQ = 1400 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N

* CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCD

MRF5S19150SR3 Datasheet (450.77 KB)

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Datasheet Details

Part number:

MRF5S19150SR3

Manufacturer:

Motorola

File Size:

450.77 KB

Description:

Rf power field effect transistors.

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