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MRF5S19150SR3, MRF5S19150R3 - RF Power Field Effect Transistors

MRF5S19150SR3 Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5S19150/D MRF5S19150R3 RF Power.
MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.

MRF5S19150SR3 Features

* TICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. , N
* CDMA Gps ACPR VDD = 28 Vdc, IDQ = 1400 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N
* CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCD

MRF5S19150SR3 Applications

* at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF5S19150SR3, MRF5S19150R3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF5S19150SR3, MRF5S19150R3
Manufacturer
Motorola
File Size
450.77 KB
Datasheet
MRF5S19150R3_Motorola.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF5S19150SR3, MRF5S19150R3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Motorola
Motorola MRF5S19150SR3-like datasheet