MRF5S19130HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev.2, 5/2006 RF Power Field Effect Transistors N - Chann.
Short RF Bead 0. 4.

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Datasheet Specifications

Part number: MRF5S19130HR3
Manufacturer: Freescale Semiconductor
File Size: 456.61 KB
Datasheet: MRF5S19130HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 V Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness on

Applications

* at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg. , Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Chann

MRF5S19130HR3 Distributors

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Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF5S19130HR3-like datasheet